Introduction | Mathematical Analysis | Applet Tutorial | Applet Worksheet | Quiz | SPICE/CAD | References | Feedback

Mathematical Analysis  

Distribution of electrons and holes among energy states is governed by the Fermi-Dirac statistics which is represented by the distribution function:



This formula says that the occupation probability is determined by the relative energy spacing between E and EFn, and the temperature. This was demonstrated in a previous applet.

The concentration of conduction band electrons depends on

(Ec - EF) / kT

The accurate formula is



Here, F1/2 is the Fermi integral of order 1/2, defined as:

and Nc is the effective density of states of conduction band given by:


An approximation can be made if Ec - EF > 3 kT. In which case,

.    (3)

This formula is applicable if n < 0.05 Nc. That is, if the donor impurity concentration, Nd, is smaller than about 5% of Nc. If Nd > 0.05 Nc, then the accurate formula (2) should be used.

At room temperature, the effective density of states is as follows:

Si GaAs Ge
Eg(eV) 1.12 1.42 0.66
Nc [cm-3] 2.8x1019 4.7x1017 1.04x1019
Nv [cm-3] 1.04x1019 7.0x1018 6x1019

Similarly, for a moderately-doped p-type where Na < 0.05 Nv, hole concentration is:

.    (4)

For heavily-doped p-type where Na > 0.05 Nv,

.   (5)