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(4) The SPICE Model Parameters of MOSFET: Level 1 DC Model
LAMBDA
GAMMA
PHI
VT0
KP
LD
L
Leff
n-Well CMOS Level 1 SPICE Model parameters
| Level 1 SPICE Parameter |
n-channel MOSFET |
p-channel MOSFET |
Units |
| Gate oxide thickness TOX |
150 |
150 |
Angstrom |
| Transconductance Parameter KP |
50 x 10-6 |
25 x 10-6 |
Amp/V2 |
| Threshold Voltage VT0 |
1.0 |
-1.0 |
Volts |
| Channel-length modulation parameter LAMBDA |
0.1/L |
0.1/L |
V-1 |
| Bulk Threshold Parameter GAMMA |
0.6 |
0.6 |
V1/2 |
| Surface Potential PHI |
0.8 |
0.8 |
V |
| Gate-drain overlap capacitance CGDO |
5 x 10-10 |
5 x 10-10 |
F/m |
| Gate-source overlap capacitance CGSO |
5 x 10-10 |
5 x 10-10 |
F/m |
| Zero-bias planar bulk depeletion capacitance CJ |
10-4 |
3 x 10-4 |
F/m2 |
| Zero-bias sidewall bulk depletion capacitance CJSW |
5 x 10-10 |
3.5 x 10-10 |
F/m |
| Bulk junction potential PB |
0.95 |
0.95 |
V |
| Planar bulk junction grading coefficient MJ |
0.5 |
0.5 |
None |
| Sidewall bulk junction grading coefficient MJSW |
0.33 |
0.33 |
None |