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(4) The SPICE Model Parameters of MOSFET: Level 1 DC Model

LAMBDA
GAMMA
PHI
VT0
KP
LD
L
Leff

n-Well CMOS Level 1 SPICE Model parameters

Level 1 SPICE Parameter

n-channel MOSFET

p-channel MOSFET

Units

Gate oxide thickness TOX

150

150

Angstrom
Transconductance Parameter KP

50 x 10-6

25 x 10-6

Amp/V2
Threshold Voltage VT0

1.0

-1.0

Volts

Channel-length modulation parameter LAMBDA

0.1/L
L in micron

0.1/L
L in micron

V-1

Bulk Threshold Parameter GAMMA

0.6

0.6

V1/2

Surface Potential PHI

0.8

0.8

V

Gate-drain overlap capacitance CGDO

5 x 10-10

5 x 10-10

F/m

Gate-source overlap capacitance CGSO

5 x 10-10

5 x 10-10

F/m

Zero-bias planar bulk depeletion
capacitance CJ

10-4

3 x 10-4

F/m2

Zero-bias sidewall bulk
depletion capacitance CJSW

5 x 10-10

3.5 x 10-10

F/m

Bulk junction potential PB

0.95

0.95

V

Planar bulk junction
grading coefficient MJ

0.5

0.5

None

Sidewall bulk junction
grading coefficient MJSW

0.33

0.33

None