1. In modern semiconductor fabrication technology, to design a MOSFET
various physical parameters can be controlled to achieve the desired threshold
voltage, Vt. For an enhancement-mode n-channel Si-MOSFET, discuss
briefly what device parameters are acceptable for the threshold voltage,
using an equation for the threshold voltage.
2. In the near future, the semiconductor industries will be facing
a problem, the so called device scaling limitation
in deep sub-micron technology (the channel length will be reached far below
0.1 micron and the gate oxide thickness will be limited), explain
what kind of problems may be encountered, in the design
of a ULSI device, if the technology uses the oxide material
( SiO2 ) as the gate insulator ?