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Homework questions

1. In modern semiconductor fabrication technology, to design a MOSFET various physical parameters can be controlled to achieve the desired threshold voltage, Vt. For an enhancement-mode n-channel Si-MOSFET,  discuss briefly what device parameters are acceptable for the threshold voltage, using an  equation for the threshold voltage.


2. In the near future, the semiconductor industries will be facing  a problem, the so called device scaling limitation in deep sub-micron technology (the channel length will be reached far below 0.1 micron and the  gate oxide thickness will be limited), explain what kind of  problems  may be encountered, in the  design of a ULSI device, if  the technology uses  the  oxide material ( SiO2 ) as the gate insulator ?