*Mathematical Analysis*

MOSFET I-V characteristics:

In this applet, the drain current is calculated as a function of V_{ds}
and V_{gs} using the following parameters (*Present I-V does
not follow this, but will be changed to these shortly, 6/8/98*).

- k
_{n}' = u_{n}C_{ox}= 50 uA/V^{2}. - (W/L)
_{n}= 4 um/2 um - k
_{p}' = u_{p}C_{ox}= 20 uA/V^{2} - (W/L)
_{p}= 2.5 (W/L)_{n}= 10 um/2 um. - LAMBDA = ( ) V
^{-1}.

The device transconductance k = k' (W/L) is therefore

- k
_{n}= k_{n}' (W/L)_{n}= 100 uA/V^{2}= k_{p}' (W/L)_{p}= k_{p}.

In the triode region (linear region),

- I
_{d}= 100 uA/V^{2}[ (V_{gs}- V_{t}) V_{ds}- 1/2 V_{ds}^{2}]

In the saturation region,

- I
_{ds}= 50 uA/V^{2}(V_{gs}- V_{t})^{2}[1 + LAMBDA (V_{ds}- V_{ds,sat})] - where V
_{ds,sat}= V_{gs}- V_{t}.

Note that, in this aplet the Threshold Voltage is assumed to be constant. The effect of body-bias, Vsb, will be treated in a separate applet using

- V
_{t}= V_{t0}+ GAMMA [ (V_{sb}+ 2 PHI_{F})^{1/2}- (2 PHI_{F})^{1/2}] - where PHI
_{F}= (E_{i }- E_{F}) / q. - E
_{i}, E_{F}= intrinsic Fermi level and the Fermi level in Si bulk.