MOSIS PARAMETRIC TEST RESULTS RUN: N57V VENDOR: ORBIT TECHNOLOGY: SCNA20 FEATURE SIZE: 2.0 microns
INTRODUCTION: This report contains the lot average results obtained by MOSIS
              from measurements of the MOSIS test structures on each wafer of
              this fabrication lot. The SPICE parameters obtained from similar
              measurements on a selected wafer are also attached.

COMMENTS: This looks like a typical Orbit Semiconductor 2.0 um n-well run.


TRANSISTOR PARAMETERS   W/L      N-CHANNEL P-CHANNEL  UNITS
                                                     
 MINIMUM                3/2                          
  Vth                                 0.90     -1.01  Volts
                                                     
 SHORT                  18/2                         
  Vth                                 0.82     -0.99  Volts
  Vpt                                13.8     -15.6   Volts
  Vbkd                               13.1     -15.7   Volts
  Idss                             2570     -1228     uA
                                                     
 WIDE                   120/2                        
  Ids0                                7.5      -0.4   pA
                                                     
 LARGE                  50/50                        
  Vth                                 0.85     -0.98  Volts
  Vjbkd                              16.1     -17.2   Volts
  Ijlk                               -7.4      -2.1   pA
  Gamma                               0.23      0.72  V^0.5
                                                     
 Delta length                         0.45      0.47  microns
  (L_eff = L_drawn-DL)                               
 Delta width                          0.00     -0.27  microns
  (W_eff = W_drawn-DW)                               
 K' (Uo*Cox/2)                       25.2      -8.6   uA/V^2
                                                     

POLY2 TRANSISTORS       W/L      N-CHANNEL P-CHANNEL  UNITS
                                                     
 MINIMUM                6/4                          
  Vth                                 0.85     -1.36  Volts
                                                   
 SHORT                  36/4                         
  Vth                                 0.80     -1.32  Volts
                                                     
 LARGE                  36/36                        
  Vth                                 0.82     -1.34  Volts
                                                     


FOX TRANSISTORS         GATE      N+ACTIVE  P+ACTIVE  UNITS
 Vth                    Poly         18.1     -14.7   Volts


BIPOLAR PARAMETERS      W/L          NPN              UNITS

 2X1                    2X1
  Beta                              139
  V_early                            52.8             Volts
  Vce,sat                             0.4             Volts

 2X2                    2X2
  Beta                              137
  V_early                            49.7             Volts
  Vce,sat                             0.2             Volts

 2X4                    2X4
  Beta                              131
  V_early                            47.1             Volts
  Vce,sat                             0.3             Volts

 2X8                    2X8
  Beta                              126
  V_early                            45.3             Volts
  Vce,sat                             0.6             Volts
  BVceo                              20.5             Volts
  BVcbo                              20.5             Volts
  BVebo                               8.8             Volts


PROCESS PARAMETERS    N+DIFF P+DIFF  POLY POLY2 METAL1 METAL2 N WELL  UNITS
 Sheet Resistance      25.2   59.4  23.3  19.6    0.05   0.03 2628    ohms/sq
 Width Variation        0.23  -0.11 -0.30 -0.59  -0.21   0.10         microns
  (measured - drawn)
 Contact Resistance    34.3  135.4   9.6   9.1           0.04         ohms
Gate Oxide Thickness 420                                             angstroms


CAPACITANCE PARAMETERS  N+DIFF  P+DIFF  POLY   POLY2   METAL1   METAL2  UNITS
 Area (substrate)       117     327      45             18       12     aF/um^2
 Area (poly)                                   443      38       14     aF/um^2
 Area (poly2)                                           40              aF/um^2
 Area (metal1)                                                   28     aF/um^2
 Area (N+active)                        823    657      34       15     aF/um^2
 Area (P+active)                        820    658                      aF/um^2
 Fringe (substrate)     481     265                                     aF/um
 Fringe (N+active)                       21                             aF/um
 Fringe (P+active)                        6                             aF/um



CIRCUIT PARAMETERS                          UNITS
 Inverters                   K
  Vinv                      1.0       2.10  Volts
  Vinv                      1.5       2.30  Volts
  Vol (100 uA)              2.0       0.27  Volts
  Voh (100 uA)              2.0       4.63  Volts
  Vinv                      2.0       2.44  Volts
  Gain                      2.0     -11.67
 Ring Oscillator
  MOSIS (31 stages)                  32.79  MHz


 N57V SPICE LEVEL2 PARAMETERS

.MODEL CMOSN NMOS LEVEL=2 PHI=0.700000 TOX=4.4900E-08 XJ=0.200000U TPG=1
+ VTO=0.8836 DELTA=2.3180E+00 LD=2.2580E-07 KP=4.7767E-05 
+ UO=621.1 UEXP=1.5300E-01 UCRIT=9.1900E+04 RSH=2.52E+01 
+ GAMMA=0.6621 NSUB=7.8110E+15 NFS=7.1500E+11 VMAX=6.5940E+04 
+ LAMBDA=3.2490E-02 CGDO=6.12E-10 CGSO=6.12E-10
+ CGBO=3.4595E-10 CJ=1.12E-04 MJ=0.95 CJSW=4.30E-10 
+ MJSW=0.455 PB=0.61
* Weff = Wdrawn - Delta_W
* The suggested Delta_W is 2.6460E-09
.MODEL CMOSP PMOS LEVEL=2 PHI=0.700000 TOX=4.4900E-08 XJ=0.200000U TPG=-1
+ VTO=-0.8459 DELTA=4.2900E+00 LD=2.3460E-07 KP=1.5574E-05 
+ UO=202.5 UEXP=2.5600E-01 UCRIT=1.2610E+05 RSH=5.94E+01 
+ GAMMA=0.6851 NSUB=8.3620E+15 NFS=1.0830E+11 VMAX=9.9990E+05 
+ LAMBDA=4.3760E-02 CGDO=6.12E-10 CGSO=6.12E-10
+ CGBO=3.8732E-10 CJ=3.24E-04 MJ=0.633 CJSW=1.89E-10 
+ MJSW=0.929 PB=0.90
* Weff = Wdrawn - Delta_W
* The suggested Delta_W is -2.7000E-07

================================================

 N57V SPICE BSIM1 (Berkeley Level 4; HSPICE Level 13) PARAMETERS

NM1 PM1 DU1 DU2 ML1 ML2
*
*PROCESS=ORBIT
*RUN=n57v
*WAFER=10
*Gate-oxide thickness= 449 angstroms 
*Geometries (W-drawn/L-drawn, units are um/um) of transistors measured were: 
* 3.0/2.0, 6.0/2.0, 18.0/2.0, 18.0/5.0, 18.0/25.0 
*Bias range to perform the extraction (Vdd)=5 volts 
*DATE=15-Sep-1995
*
*NMOS PARAMETERS
*
-9.29374E-01, 1.75717E-01, 2.53687E-01
 7.46818E-01, 0.00000E+00, 0.00000E+00
 1.46728E+00,-2.27217E-01,-2.37445E-01
 3.00399E-01, 2.07963E-02,-2.99976E-01
-9.79388E-03, 4.60109E-02,-2.22619E-02
 6.85713E+02,5.09278E-001,-1.44300E-001
 5.28114E-02, 4.09290E-02,-7.51077E-02
 3.50986E-01, 5.33109E-01,-3.27872E-01
 9.41154E+00,-5.53126E+00, 7.85492E+01
-1.93623E-03,-9.04089E-03,-5.90268E-03
 5.75590E-04,-2.96780E-03,-8.71981E-03
 1.86391E-03,-1.00783E-03, 2.56224E-02
1.26538E-02,-2.76701E-02, 8.93641E-02
 8.47841E+02, 6.38811E+02,-5.09701E+02
-7.28783E+00, 4.71113E+01, 1.33831E+02
 1.10468E+01, 1.14599E+02,-7.66350E+01
 1.63049E-02, 1.10119E-01,-9.55543E-02
4.49000E-002, 2.70000E+01, 5.00000E+00
6.12E-010,6.12E-010,3.67765E-010
1.00000E+000,0.00000E+000,0.00000E+000
1.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
*
* Gate Oxide Thickness is 449 Angstroms
*
*PMOS PARAMETERS
*
-4.38695E-01, 3.80190E-01,-4.80284E-01
 6.91803E-01, 0.00000E+00, 0.00000E+00
 7.28490E-01,-3.27229E-01, 7.30653E-01
 3.50364E-03,-6.40594E-04, 1.78077E-01
-1.47658E-02, 5.63401E-02,-1.49919E-02
 2.28449E+02,8.89430E-001,2.44729E-001
 9.50778E-02, 6.78824E-02,-6.38273E-02
 2.25998E-02, 1.56956E-01, 2.13976E-03
 9.87660E+00,-4.20161E+00, 5.48165E+00
-2.09758E-03,-1.28037E-03,-3.08801E-03
 1.20442E-03,-3.77126E-03,-4.63365E-06
 4.03566E-03, 4.62297E-04, 1.51254E-04
-7.51253E-05, 5.05991E-03, 6.96859E-03
 2.34986E+02, 7.25957E+01, 1.67228E+02
 7.77912E+00, 2.08715E+00, 1.80980E+01
-1.06046E+00, 1.05111E+01, 1.02053E+01
-1.26453E-02, 2.24832E-03, 1.67275E-02
4.49000E-002, 2.70000E+01, 5.00000E+00
6.12E-010,6.12E-010,4.04517E-010
1.00000E+000,0.00000E+000,0.00000E+000
1.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
0.00000E+000,0.00000E+000,0.00000E+000
*
*N+ diffusion:: 
*
25.2,    1.080000e-04,    4.116900e-10,    1e-08,    0.8
0.8,    1.05826,    0.454471,    0,    0
*
*P+ diffusion:: 
*
59.4,    3.258700e-04,    2.428400e-10,    1e-08,    0.8
0.8,    0.599914,    1.26799,    0,    0
*
*METAL LAYER -- 1
*
0.03,    2.6e-05,    0,    0,    0
0,    0,    0,    0,    0
*
*METAL LAYER -- 2
*
2628,    1.3e-05,    0,    0,    0
0,    0,    0,    0,    0