Metal-Oxide-Semiconductor Calculator Applet
It calculates various parameters of the metal-oxide-semiconductor structure. Parameters that can be calculated are: metal-semiconductor workfunction difference (Wms), the flat-band voltage (VFB), and the threshold voltage (VT). Also calculated are the oxide capacitance (Co), the bias voltage needed to create a strong-inversion condition in semiconductor (PhiSI), the maximum depletion width in semiconductor (xdm) that occurs under the strong inversion condition, and the space-charge or bulk-charge (QB) in the semiconductor under the strong inversion condition.
This applet is to be used in conjunction with other MOS and MOSFET applets. This applet will be useful in a MOSFET design problem. Links to other MOS applets will be provided as they become available.