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Quiz



 
 

  1. For Si with ni = 1E10 cm-3, and doped with acceptor impurities to Na = 1E17 cm-3, what is the minority electron concentration at equilibrium ? see the answer.
  2. If a forward bias V=0.71 Volts is applied to a Si PN junction where the p-type doping is 1E17 cm-3, find the (injected) minority electron concentration at the junction edge. see the answer.
  3. Change the input signal voltage until a Base-Emitter bias Vbe = 0.72 Volt is applied. Find the Base transport factor, the Emitter injection efficiency, and the transistor Beta. see the answer.